Transient Phenomena in High Speed Bipolar Devices
نویسندگان
چکیده
منابع مشابه
Novel Transient Phenomena in Heterojunction Bipolar Transistors
The interaction between transferred-electron effect and base widening under transient conditions in III-V heterojunction bipolar transistors is considered. Modification of the collector field profile with an n+ doping spike is shown to cause a time delay for the onset of Kirk effect creating conditions for the inception of charge instabilities. Numerical simulations suggest the possibility of s...
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ژورنال
عنوان ژورنال: VLSI Design
سال: 1998
ISSN: 1065-514X,1563-5171
DOI: 10.1155/1998/35648